The constructive and technological features of creating a sensitive element of physical quantity sensors of extended functionality based on p-type boron-doped silicon whiskers grown by a chemical vapour deposition (CVD) are considered. In the paper we investigate the effect of the Si whisker resistivity on the temperature of an output signal. The distribution of a temperature field is simulated to calculate stationary and dynamic cases in varying both the geometry of contacts placement and the values of thermal conductivity of insulating material and environment. An analysis of computer simulation of the distribution of mechanical stress and deformation in the elements of a pressure sensor, including thermal stress and deformation is conducted to take into account the effect of thermal stresses on the measurement accuracy. The operating temperature range of a sensor (213K-423K) and possible application areas have been defined. A digitizing circuit diagram based on microcontrollers is offered for further signal processing.
- G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F Schafer, and S.Finkbeiner,“Next generation pressure sensors in surface micromachining technology”, in Proc. 13th International Conference on Solid-State Sensors, Actuators, and Microsystems; pp. 35–36, Seoul, Korea. 2005.
- Y.C. Sun, Z. Gao, L.Q. Tian, and Y.Zhang, Modelling of the reverse current and its effects on the thermal drift of the offset voltage for piezoresistive pressure sensors. Sensors and Actuators A, vol. 116, pp. 125–132, 2004.
- I Maryamova, A Druzhinin, and E Lavitska, Low-temperature semiconductor mechanical sensors. Sensors and Actuators A, vol. 85, pp. 153–157, 2000.
- P. Eswaran, et. al., “MEMS Capacitive Pressure Sensors: A Review on Recent Development and Prospective”, International Journal of Engineering and Technology (IJET), vol. 5, no. 3, 2013.
- A. Druzhinin , . I. Maryamova , E.Lavitska , and Y.Pankov, “Physical aspects of multifunctional sensors based on piezothermomagnetic effects in semiconductors”, Sensors and Actuators A, vol. 68, pp. 229-233, 1998.
- P.Girak and O.Ostapenko, “The industrial pressure sensors with technology Trafag”, Mir Avtomatizatsyi, no. 1-2, pp. 52-55, 2016. (Ukrainian)
- M.W. Shao, Y.Y. Shan, N.B. Wong, and S.T. Lee, “Silicon Nanowire sensors for bioanalytical applications: Glucose and hydrogen peroxide detection”, Advanced Functional Materials, vol. 15, pp. 1478–1482, 2005.
- T. Toriyama, Y. Tanimoto, and S. Sugiyama, “Single crystal silicon nano-wire piezoresistors for mechanical sensors”, Microelectromechanical Systems Journal, no.11, pp. 605–611, 2002.
- J.X. Cao, X.G. Gong, and R.Q. Wu, “Giant piezoresistance and its origin in Si(111) whiskers: First-principles calculations”, Physical Review B, vol. 75, article 233302, 2007.
- A.Druzhinin, O.Kutrakov, and I. Maryamova, “Tensoresistive pressure sensors based on silicon whiskers for a wide range of temperatures”, Bulletin of Lviv Polytechnic National University: Electronics, no. 708, pp. 64-71, 2011. (Ukrainian)
- М.Tukhan, “Experimental study of characteristics piezoresistive pressure sensors non-stationary processes”, Bulletin of “Ihor Sikorskyi Kyiv Polytechnic Institute” National Technical University of Ukraine: Pryladobuduvanniya, vol. 51, no. 1, pp. 5-11, 2016. (Ukrainian)
- http://www.mathworks.com, MATLAB PDE Toolbax.
- “Temperature sensors, type AKS 21”, Danfoss products, Literature No. DKRCI.ED.SA0.A2.22, p. 1-4, 2007.
- Е.Slyva, “Temperature adjustment of physical values measuring transducers based on MSP430F149 microcontrollers designed by Texas Instruments”, http://www.chipnews.ru/html.cgi/arhiv/01_05/stat-3.htm