Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers
The influence of deformation on magnetoresistance features in indium antimonide and gallium antimonide whiskers of n-type conductivity with different doping concentration in the vicinity to the metal-insulator transition (MIT) has been investigated in the temperature range 4.2 – 50 K and the magnetic field 0 – 14 T. The Shubnikov-de Haas oscillations in the whole range of magnetic field inductions have been shown in deformed and undeformed whiskers.