resistivity

Study of thermoelectric material Zr1-xCeNiSn

The electron energy state, magnetic and transport characteristics of of thermometric materials Zr1-xCexNiSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from x=0.01÷0.10 and H £ 10 kGs. The material Zr1-xCexNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-ZrNiSn heavily doped with the Ce impurity.

Study of thermoelectric material Hf Ni1-x CO x Sn

The electron energy state, magnetic and transport characteristics of thermometric materials HfNi1-xCoxSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from Co » 9,5×1019 NA см-3 ( x = 0,005 )÷ 5,7 ×1021 см-3 ( x = 0,30 ) and H £ 10 kGs. The material HfNi1-xCoxSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Co impurity.

Study of thermometric material Hf1-xErxNiSn

The electron energy state, magnetic and transport characteristics of of thermometric materials Hf1-xErxNiSn were investigated in the T = 80÷400 K temperature range and at charge carriers concentration from x=01÷0.10 and H £ 10 kGs. The material Hf1-xErxNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Er impurity.