resistivity

The results of a complex study of the semiconductor thermometric material TiСo1-xMnxSb, х=0.01–0.10, for the producing of sensitive elements of thermoelectric and electro resistive sensors are presented. Microprobe analysis of the concentration of atoms on the surface of TiСo1-xMnxSb samples established their correspondence to the initial compositions of the charge, and X-ray phase analysis showed the absence of traces of extraneous phases on their diffractograms.

The second part of the complex research of Ti1-xScxCoSb thermometric material for the sensitive elements of thermoelectric and electro resistant thermal converters is presented. Simulation of thermodynamic, electrotechnical, energetic and structural characteristics of Ti1-xScxCoSb semiconductor thermometric material for various options of atoms placement is performed.

The first part of the complex study of the thermometric material Ti1-xScxCoSb for the production of sensitive elements of thermoelectric and resistive thermotransducers is presented. The kinetic, energetic and magnetic characteristics of the Ti1-xScxCoSb semiconductor thermometric material in the ranges T=80–400 K, x=0.005–0.15 have been investigated. The mechanisms of simultaneous generation of structural defects of acceptor and donor natures in the semiconductor are revealed.

Mathematical modeling and experimental measurements of the kinetic and energy characteristics of the sensitive elements of thermo converters based on the thermometric material Ti1-xMoxCoSb in the temperature range 80-400 K was carried out. Previous studies of the electrophysical, energetic, and structural properties of thermometric materials obtained by doping the TiCoSb  semi-Heisler phase with Ni and V  atoms  respectively have  shown  that  they  are  inherent  in  the  stable  and  reproducible characteristics at 4.2–1000 K.

The electron energy state, magnetic and transport characteristics of of thermometric materials Zr1-xCexNiSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from x=0.01÷0.10 and H £ 10 kGs. The material Zr1-xCexNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-ZrNiSn heavily doped with the Ce impurity.

The electron energy state, magnetic and transport characteristics of thermometric materials HfNi1-xCoxSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from Co » 9,5×1019 NA см-3 ( x = 0,005 )÷ 5,7 ×1021 см-3 ( x = 0,30 ) and H £ 10 kGs. The material HfNi1-xCoxSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Co impurity.

The electron energy state, magnetic and transport characteristics of of thermometric materials Hf1-xErxNiSn were investigated in the T = 80÷400 K temperature range and at charge carriers concentration from x=01÷0.10 and H £ 10 kGs. The material Hf1-xErxNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Er impurity.