semiconductor

In this work, the MOSFET device is considered.  The carrier densities in the MOSFET are modeled by the drift-diffusion equation.  We manipulate the formulas of the charge density at the equilibrium in order to derive a simple Poisson's or Laplace's equation.  To formulate a shape optimization problem, we have defined a cost functional.  The existence of an optimal solution is proved.  To solve the involved optimization problem, we have designed a numerical approach based on the finite element method combined with the genetic algorithm.  Several numerical examples are established to prove th

The complex of technological and metrological researches concerning development of filamentous monocrystals application and fixing methods on various materials of substrate (elastic elements) is considered. The ways of uncontrolled distortions avoiding of the initial monocrystal defect-free structure that can occur at the nodes of its mounting and reduce the Q-value of the resonator oscillations, which is the main characteristic of the tensotransducer quality, is shown.