тонкі плівки

The mercury selenide (HgSe) films were obtained on glass substrates via the chemical deposition method. The aqueous solutions of mercury(II) nitrate, sodium thiosulfate, sodium selenosulfate and tri-sodium citrate were used. X-ray and elemental analysis of the film sample were made. The effect of initial reagents concentration, synthesis duration and temperature on the mass of HgSe films was investigated and coatings thickness was calculated. The optical and morphological properties of HgSe films were examined. The deposition mechanism is discussed.

The quantum-chemical modeling of the synthesis process chemistry of CdS and CdSe in aqueos solutions was carried out. For that reason, the CdS synthesis simulation was carried out through the formation of Cd(II) complex forms with the trisodium citrate and ammonium hydroxide. At the CdSe synthesis, the sodium selenosulfate with and without trisodium citrate was used. It was established that this process passes through several intermediate stages with the transitional reactive complexes formation.

The quantum-chemical modeling of the synthesis process chemistry of ZnS and ZnSe in aqueos solutions was carried out.For modeling the simulation of ZnS synthesis was made through the formation of Zn(II) complex forms with the trisodium citrate, sodium hydroxide and the pair of ammonium hydroxide with hydrazine hydrate. For the synthesis of ZnSe was used only sodium hydroxide.It was established that this process passes through several intermediate stages with the transitional reactive complexes formation.

The HgS and HgSe films were obtained by chemical deposition technique from an aqueous solution of mercury(II) salt, complexing and chalcogenizing agents. For the obtaining of Hg(II) complexes during the HgS films synthesis thiourea was used, and during the HgSe films synthesis – potassium iodide, potassium rhodanide and sodium thiosulfate. By the X-ray phase analysis was confirmed the formation of desired compounds, as well as the formation of Hg3I2Se2 ternary compound in the case of potassium iodide use during the synthesis of HgSe films.

Alternative and renewable sources of energy, such as wind and solar energy, hydro and geothermal energy, are attracting increasing attention all over the world. The growing interest in them is caused by environmental considerations, on the one hand, and the limited traditional earth resources - on the other. A special place among them is occupied by photovoltaic converters of solar energy.

Due to its unique optical and electrical properties semiconductor metal - sulfide and   metal – selenide thin films can be used in photovoltaic systems. The largest using acquired CdS films. But due to its toxicity, there is considerable interest in replacing CdS other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the promising candidates for replacing cadmium sulfide is chemically deposited film indium sulfide.

Due to its unique optical and electrical properties of chalcogenides of zinc subgroup metals semiconductor thin films can be used in photovoltaic systems. The largest usage is acquired by CdS films. But due to its toxicity, there is considerable interest in replacing CdS with other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the candidates for replacing cadmium sulfide is chemically deposited mercury (II) chalcogenides films.

Розглянуто та проаналізовано основні аспекти синтезу тонких плівок індій сульфіду методом хімічного осадження. Акцентовано увагу на виборі методу хімічного осадження в зв’язку з його перевагами. Проаналізовано основні умови синтезу плівок (природа і концентрація реагуючих речовин робочого розчину, температура, час осадження, природа підкладки, умови відпалу) та розглянуто їхній вплив на фазовий склад, оптичні та морфологічні властивості плівок. Підсумовано результати досліджень фізико-хімічних властивостей плівок.

The paper focuses on the study of spectral and angular conditions for interface antireflection by means of impedance contrast suppression, applying the method of theoretical and computer analysis of the envelope functions of spectra of multibeam interference. The research is conducted in the resonance dispersion region of dielectric constant of the single and binary boundaries that form a plane-parallel structure. The analytical relations between the Brewster/Pseudo-Brewster angles and structure parameters are.