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  4. Reconstruction of the depletion layer in MOSFET by genetic algorithms

Reconstruction of the depletion layer in MOSFET by genetic algorithms

MMC.
2020;
Volume 7, Number 1
: pp. 96–103
https://doi.org/10.23939/mmc2020.01.096
Received: February 22, 2020
Revised: March 18, 2020
Accepted: March 20, 2020

Mathematical Modeling and Computing, Vol. 7, No. 1, pp. 96–103 (2020)

Authors:
  1. El Yazidi Youness
  2. Ellabib Abdellatif
1
Laboratory of Applied Mathematics and Computer Science, Faculty of Science and Technology, Cady Ayyad University
2
Laboratory of Applied Mathematics and Computer Science, Faculty of Science and Technology, Cady Ayyad University

In this work, the MOSFET device is considered.  The carrier densities in the MOSFET are modeled by the drift-diffusion equation.  We manipulate the formulas of the charge density at the equilibrium in order to derive a simple Poisson's or Laplace's equation.  To formulate a shape optimization problem, we have defined a cost functional.  The existence of an optimal solution is proved.  To solve the involved optimization problem, we have designed a numerical approach based on the finite element method combined with the genetic algorithm.  Several numerical examples are established to prove the validity of the proposed approach.

semiconductor
shape optimization
finite element
genetic algorithm
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