OPTIMIZATION OF GEOMETRY OF PIEZORESISTIVE EFFECT ON THE EXAMPLE OF CUBIC CRYSTALS
On the example of semiconductor crystals Ge, Si, PbTe, PbS, InSb with different levels of doping and different types of conductivity, the geometry of the piezoresistive effect was optimized, namely, such directions of voltage measuring and uniaxial pressure applying were determined, which ensure the maximum achievable value of the effect. The optimization is based on an approach using the construction and analysis of extreme surfaces that represent all possible maxima of the objective function (the magnitude of the effect) under different spatial orientations of interacting factors.