The HgS and HgSe films were obtained by chemical deposition technique from an aqueous solution of mercury(II) salt, complexing and chalcogenizing agents. For the obtaining of Hg(II) complexes during the HgS films synthesis thiourea was used, and during the HgSe films synthesis – potassium iodide, potassium rhodanide and sodium thiosulfate. By the X-ray phase analysis was confirmed the formation of desired compounds, as well as the formation of Hg3I2Se2 ternary compound in the case of potassium iodide use during the synthesis of HgSe films.
Alternative and renewable sources of energy, such as wind and solar energy, hydro and geothermal energy, are attracting increasing attention all over the world. The growing interest in them is caused by environmental considerations, on the one hand, and the limited traditional earth resources - on the other. A special place among them is occupied by photovoltaic converters of solar energy.
Due to its unique optical and electrical properties semiconductor metal - sulfide and metal – selenide thin films can be used in photovoltaic systems. The largest using acquired CdS films. But due to its toxicity, there is considerable interest in replacing CdS other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the promising candidates for replacing cadmium sulfide is chemically deposited film indium sulfide.
Due to its unique optical and electrical properties of chalcogenides of zinc subgroup metals semiconductor thin films can be used in photovoltaic systems. The largest usage is acquired by CdS films. But due to its toxicity, there is considerable interest in replacing CdS with other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the candidates for replacing cadmium sulfide is chemically deposited mercury (II) chalcogenides films.
The paper focuses on the study of spectral and angular conditions for interface antireflection by means of impedance contrast suppression, applying the method of theoretical and computer analysis of the envelope functions of spectra of multibeam interference. The research is conducted in the resonance dispersion region of dielectric constant of the single and binary boundaries that form a plane-parallel structure. The analytical relations between the Brewster/Pseudo-Brewster angles and structure parameters are.
Mercury selenide (HgSe) films were obtained on glass substrates via the chemical deposition method. The aqueous solutions of mercurium(II) nitrate, potassium iodide and sodium selenosulfate were used. Film samples obtained at two temperatures of synthesis were analyzed by X-ray and structural analysis. The effect of the deposition duration on the optical and morphological properties of HgSe films was investigated. The deposition mechanism was discussed.
There are formulated the key systems of equation describing structurally nonhomogeneous two-component solid solutions. As the key functions there are chosen the stress tensor (displacement vector) and the densities of admixture and skeleton. On this basis the near-surface nonhomogeneity densities of skeleton and admixture, stresses and size effects of surface tension and intensity of the power load causing the thin film fracture are studied. The attention is paid to the admixture influence on size effects.
The zinc sulfide (ZnS) thin films were prepared on glass substrates by chemical bath deposition using the aqueous solutions of zinc chloride, thiourea, pH regulator and complexing agent (ammonia and hydrazine hydrate, trisodium citrate or sodium hydroxide). The calculations of boundary conditions for formation of zinc sulfide and zinc hydroxide were made at various zinc salt concentrations with different complexing agents. The structural, morphology and optical properties of the ZnS thin films were investigated.