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  3. Volume 86, no.4, 2025
  4. ANALYSIS OF THE STABILITY OF A CMOS TEMPERATURE SENSOR UNDER TEMPERATURE AND POWER-SUPPLY VARIATIONS

ANALYSIS OF THE STABILITY OF A CMOS TEMPERATURE SENSOR UNDER TEMPERATURE AND POWER-SUPPLY VARIATIONS

ISTCMTM.
2025;
Volume 86(4), Number 4
: 26-32
https://doi.org/10.23939/istcmtm2025.04
Authors:
  1. Oleksandr Maliuk
  2. Volodymyr Martyniuk
1
Vinnytsia National Technical University
2
Vinnytsia National Technical University

The paper considers the problem of stability of CMOS temperature sensors under variations in temperature and supply voltage. A critical analysis of existing methods (SPICE modeling, PTAT/CTAT models, Monte Carlo analysis, calibration, and statistical approaches) is performed, and their limitations are identified, in particular, insufficient consideration of nonlinear effects, noise, and the multifactorial influence of external conditions. A mathematical model is proposed taking into account linear, quadratic, and mixed dependencies, which allows quantitatively assessing the sensitivity and stability of the sensor. The results obtained are of practical importance for creating highly reliable CMOS sensors in industrial, automotive, and aviation applications.

Sensor elements; temperature sensitivity; normalized error; multipoint calibration; modeling; statistical analysis; compensation of nonlinearities; measurement reliability.
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