A strain sensor resistent to proton irradiation

2012;
: pp. 13-16
1
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
2
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
3
Lviv Polytechnic National University
4
Lviv Polytechnic National University

Influence of proton irradiation on the properties of Si1-xGex whiskers as strain sensors is studied in this work. On the basis of secondary signal processing the possibility of using such whiskers as a strain sensor’s sensitive element resistant to proton radiation is shown.

  1. Y. Lepikh, et al., The Design of New Generation Microelectronic Sensors for Intelligent Systems. – Odesa, Ukraine: Astroprint. - 2010. – 296 p. (Ukrainian)
  2. N. Pavlovska, et al., Influence of Proton Irradiation on Physical Properties of Si-Ge Whiskers // Sensorna elektronika ta mikrosystemni tekhnologii. – Odesa, Ukraine: Publishing house of Mechnikov National University of Odesa.. – Vol. 1 (7), №4. 2010. – P. 5–8. (Ukrainian)
  3. L. Vines, E. Monakhov, Y. Kuznetsov, R. Kozłows­ki, P. Kaminski, B. Svensson, Formation and Origin of the Dominating Electron Trap in Irradiated p-type Silicon // Physical Review B. – Vol. 78. – 2008.
  4. N. Agrinskaya, V. Kozub, T. Polianskaya, A. Saidov, Manifestation of E2-conduction in Magnetoresistance of Multivalley Semiconductors // Fizika i tekhnika polupro­vodnikov. – Moscow, Russia: Publishing house of Ioffe Physical-Technical Institute of the Russian Academy of Sciences. – Vol. 33, № 2.- 1999. – P. 161–169. (Russian).
  5. http://www.cypress.com/?rID=39976