Influence of proton irradiation on the properties of Si1-xGex whiskers as strain sensors is studied in this work. On the basis of secondary signal processing the possibility of using such whiskers as a strain sensor’s sensitive element resistant to proton radiation is shown.
- Y. Lepikh, et al., The Design of New Generation Microelectronic Sensors for Intelligent Systems. – Odesa, Ukraine: Astroprint. - 2010. – 296 p. (Ukrainian)
- N. Pavlovska, et al., Influence of Proton Irradiation on Physical Properties of Si-Ge Whiskers // Sensorna elektronika ta mikrosystemni tekhnologii. – Odesa, Ukraine: Publishing house of Mechnikov National University of Odesa.. – Vol. 1 (7), №4. 2010. – P. 5–8. (Ukrainian)
- L. Vines, E. Monakhov, Y. Kuznetsov, R. Kozłowski, P. Kaminski, B. Svensson, Formation and Origin of the Dominating Electron Trap in Irradiated p-type Silicon // Physical Review B. – Vol. 78. – 2008.
- N. Agrinskaya, V. Kozub, T. Polianskaya, A. Saidov, Manifestation of E2-conduction in Magnetoresistance of Multivalley Semiconductors // Fizika i tekhnika poluprovodnikov. – Moscow, Russia: Publishing house of Ioffe Physical-Technical Institute of the Russian Academy of Sciences. – Vol. 33, № 2.- 1999. – P. 161–169. (Russian).