Fermi level.

The results of modeling the thermodynamic, structural, and kinetic properties of the thermometric material TiCo1-xCrxSb, x=0–0.10, as well as the conversion functions of sensitive elements of a thermoelectric converter based on it in the temperature range of 4.2–1000 K are presented. The results presented continue the research of sensitive elements of temperature converters based on basic semiconductor thermometric material TiCoSb.

The results of experimental studies of sensitive elements of temperature transducers based on semiconductor
thermometric material HfNi1-xCuxSn are presented. Thermometric materials HfNi1-xCuxSn, x=0.01–0.10, were produced by fusing a
charge of components in an electric arc furnace with a tungsten electrode (cathode) in an atmosphere of purified argon under a
pressure of 0.1 kPa on a copper water-cooled base (anode). Heat treatment of the alloys consisted of homogenizing annealing at a

The results of modeling the properties of the semiconductor solid solution Lu1-xScxNiSb, x=0–0.10, which is a promising thermometric material for the manufacture of sensitive elements of thermocouples, are presented. Modeling of the electronic structure of Lu1-xScxNiSb was performed by the Korringa-Kohn-Rostoker (KKR) method in the approximation of coherent potential and local density and by the full-potential method of linearized plane waves (FLAPW).

The results of experimental research of perspective thermometric material Lu1-xZrxNiSbwhich can be used for the production of sensitive elements of thermoelectric and electroresistive thermometers are presented. Thermometric materials Lu1-xZrxNiSb, x=0.01–0.10, were made by fusing a charge of components in an electric arc furnace with a tungsten electrode (cathode) in an atmosphere of purified argon under a pressure of 0.1 kPa on a copper water-cooled hearth (anode). Heat treatment of alloys consisted of homogenizing annealing at a temperature of 1073 K.

The results of a comprehensive study of the crystal and electronic structures, kinetic and energetic performances of the semiconductor thermometric material Er1-xScxNiSb, (x=0–0.1) are presented. Microprobe analysis of the concentration of atoms on the surface of Er1-xScxNiSb samples established their correspondence to the initial compositions of the charge, and the diffractograms of the samples are indexed in the structural type of MgAgAs.

Automated The results of modeling performances of the semiconductor solid solution Er1-xScxNiSb are presented, which can be a promising thermometric material for the manufacture of sensitive elements of thermoelectric and electroresistive thermocouples. Fullprof Suite software was used to model the crystallographic characteristics of the Er1-xScxNiSb thermometric material.