коефіцієнт термо-ЕРС

RESEARCH OF SENSITIVE ELEMENTS OF THERMOELECTRIC CONVERTERS BASED ON Hf1-xNbxNiSn

The results of modeling and experimental studies of the structural, magnetic, electrokinetic and energy properties of the thermometric material Hf1-xNbxNiSn, as well as the conversion functions of the sensitive elements of a thermoelectric thermometer based on it at temperatures of 4.2–1000 K are presented. For the case of an ordered variant of the crystal structure of the thermometric material, the simultaneous generation of donor and acceptor states in the forbidden band εg of the semiconductor is established.

SIMULATION OF CHARACTERISTICS OF SENSITIVE ELEMENTS OF TEMPERATURE CONVERTERS BASED ON TiCo1-xCrxSb

The results of modeling the thermodynamic, structural, and kinetic properties of the thermometric material TiCo1-xCrxSb, x=0–0.10, as well as the conversion functions of sensitive elements of a thermoelectric converter based on it in the temperature range of 4.2–1000 K are presented. The results presented continue the research of sensitive elements of temperature converters based on basic semiconductor thermometric material TiCoSb.

FEATURES OF SIMULATION OF CHARACTERISTICS OF THERMOMETRIC MATERIAL Lu1-xZrxNiSb

The results of modeling the thermometric characteristics of the semiconductor solid solution Lu1–xZrxNiSb, which is a promising thermometric material for the manufacture of sensitive elements of thermoelectric and electro resistive thermocouples, are presented. Modeling of the electronic structure of Lu1–xZrxNiSb was performed by the Korringa–Kohn–Rostoker (KKR) method in the approximation of coherent potential and local density and by the full-potential method of linearized plane waves (FLAPW).

INVESTIGATION OF THERMOMETRIC MATERIAL Ti1-xScxCoSb. KINETIC, ENERGY AND MAGNETIC CHARACTERISTICS

The first part of the complex study of the thermometric material Ti1-xScxCoSb for the production of sensitive elements of thermoelectric and resistive thermotransducers is presented. The kinetic, energetic and magnetic characteristics of the Ti1-xScxCoSb semiconductor thermometric material in the ranges T=80–400 K, x=0.005–0.15 have been investigated. The mechanisms of simultaneous generation of structural defects of acceptor and donor natures in the semiconductor are revealed.

INVESTIGATION OF KINETIC CHARACTERISTICS OF SENSITIVE ELEMENTS OF THERMOCONVERTERS BASED ON Ti1-xMoxCoSb

Mathematical modeling and experimental measurements of the kinetic and energy characteristics of the sensitive elements of thermo converters based on the thermometric material Ti1-xMoxCoSb in the temperature range 80-400 K was carried out. Previous studies of the electrophysical, energetic, and structural properties of thermometric materials obtained by doping the TiCoSb  semi-Heisler phase with Ni and V  atoms  respectively have  shown  that  they  are  inherent  in  the  stable  and  reproducible characteristics at 4.2–1000 K.

Study of thermoelectric material Zr1-xCeNiSn

The electron energy state, magnetic and transport characteristics of of thermometric materials Zr1-xCexNiSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from x=0.01÷0.10 and H £ 10 kGs. The material Zr1-xCexNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-ZrNiSn heavily doped with the Ce impurity.

Study of thermometric material Hf1-xErxNiSn

The electron energy state, magnetic and transport characteristics of of thermometric materials Hf1-xErxNiSn were investigated in the T = 80÷400 K temperature range and at charge carriers concentration from x=01÷0.10 and H £ 10 kGs. The material Hf1-xErxNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Er impurity.