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The EPR studies of electrical and magnetic properties of In4Se3 intercalated by copper are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. EPR spectra for In4Se3 crystal with the impurities of Cu at room temperature are analyzed.

The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied.