thermo-power coefficient

Mathematical modeling and experimental measurements of the kinetic and energy characteristics of the sensitive elements of thermo converters based on the thermometric material Ti1-xMoxCoSb in the temperature range 80-400 K was carried out. Previous studies of the electrophysical, energetic, and structural properties of thermometric materials obtained by doping the TiCoSb  semi-Heisler phase with Ni and V  atoms  respectively have  shown  that  they  are  inherent  in  the  stable  and  reproducible characteristics at 4.2–1000 K.

The electron energy state, magnetic and transport characteristics of of thermometric materials Zr1-xCexNiSn were investigated in the T = 80 ¸ 400 K temperature range and at charge carriers concentration from x=0.01÷0.10 and H £ 10 kGs. The material Zr1-xCexNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-ZrNiSn heavily doped with the Ce impurity.

The electron energy state, magnetic and transport characteristics of of thermometric materials Hf1-xErxNiSn were investigated in the T = 80÷400 K temperature range and at charge carriers concentration from x=01÷0.10 and H £ 10 kGs. The material Hf1-xErxNiSn is sensitive to the temperature change and could be used as the basis for the sensitive thermoelectric devices. We investigated the crystal structure, electron density of states (DOS) and the kinetic and energy characteristics of n-HfNiSn heavily doped with the Er impurity.