semiconductor films

Based on thermodynamic constants, the concentration limits of the initial zinc-containing salt and the range of pH values at which the depositions of ZnS and ZnSe without Zn(OH)2 are possible were calculated. The boundary conditions of the formation of the ZnSxSe1–x solid solution in the hydroxide-hydrazine-thiourea-selenium system were defined by the overlap area between the constructed ZnS and ZnSe formation zones. The task of complex intermolecular interaction between complexed zinc ions and two chalcogenizers in the working solution was solved on the basis of mathematical calculations.

Solid solutions films of mercury sulfide-selenide (HgS1–xSex) were synthesized on glass substrates by the chemical bath deposition method. Theoretical calculations of the boundary conditions for the HgS and HgSe formation in the mercury-tartrate-thiourea-selenosulfate system were made. The boundary conditions of HgS1–xSex were defined by the overlap area between the constructed HgS and HgSe formation zones. The X-ray diffraction and elemental analysis showed that the obtained films are single-phase and consist of HgS1–xSex substitutional solid solutions in zincblende modification.

The zinc sulfide (ZnS) and zinc selenide (ZnSe) films of belongs to the AIIBVI group of semiconductors type, which are the main part of photosensitive elements of electronic devices. An analytical review of the scientific and technical literature shows that in recent years intensive research has been conducted to replace toxic cadmium-containing films with non-toxic counterparts, while maintaining the effectiveness of photovoltaic elements. The ZnS and ZnSe films are the most promising for this replacement.

The conditions effect of obtaining CdS and CdSe thin films by a chemical surface deposition method (CSD) on their structural and optical properties has been studied. The optical transmission, absorption spectra and surface morphology of films and degree of phase uniformity were investigated. The content of cadmium ions in the obtained coatings by the method of voltammetry inversion was defined. The thickness of the obtained semiconductor films was calculated according to the mass of cadmium.