Graphene was first obtained at the beginning of the 21st century, and since then various methods have been developed for its synthesis. This variety is explained by the natural layered structure of graphite. A large number of methods is based on the idea of separating graphite layers. They are considered relatively cheap, productive and available in almost all laboratories.
This study reports on the preparation of novel zinc/aluminium layered double hydroxide intercalated clopyralid (Zn/Al-LDH-CP) nanocomposites fabricated via co-precipitation. An expansion of the interlayer gallery of Zn/Al-LDH for the accommodation of clopyralid was observed from the powder X-ray diffraction (PXRD) pattern, confirming the occurrence of intercalation. The results from Fourier transform infrared and elemental analysis were consistent with those from PXRD, thus supporting the intercalation of clopyralid.
The InSe$\langle\beta$-CD$\langle$FeSO$_4\rangle\rangle$ clathrate with hierarchical architecture reveals a giant magnetoresistive effect and extraordinary (oscillating) behavior of the current-voltage characteristics in the magnetic field in the direction perpendicular to nanolayers. A new technological approach for the synthesis of multilayered nanostructure is proposed. It allows attaining a fourfold degree of expansion of the initial InSe semiconductor matrix in which the cavitate of $\beta$-cyclodextrin ($\beta$-CD) and iron sulfate served as a guest content. This makes it possible
The EPR studies of electrical and magnetic properties of In4Se3 intercalated by copper are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. EPR spectra for In4Se3 crystal with the impurities of Cu at room temperature are analyzed.
The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied.
Influence of intercalation on the electronic band structure of the layered nanohybrid compound of the GaSe-type with a stage ordering (three layers in the packet in the considered case) is studied in the modified version of the periodic Anderson model. Density of electron states for the intercalated system is calculated both in the impurity single-level approximation and the one with the level smearing out (of the Lorentzian-type) due to local electron correlations.
We propose a statistical theory of classical-quantum description of electro-diffusion processes of intercalation in "electrolyte – electrode" system. Using the nonequilibrium statistical operator method the generalized transport equations of Nernst-Planck type for ions and electrons in the "electrolyte – electrode" system are obtained. These equations take into account time memory effects and spatial heterogeneity. Within a classical description an analytical calculation of spatially inhomogeneous diffusion coefficients for ions is carried out.