Electron interaction with point defects in CdSe0.35Te0.65: joining of ab initio approach with short-range principle
This study examines the problem of influence of point defects on transport phenomena in CdSexTe1-x (x=0.35) crystals. For the first time, the calculation of the electronic spectrum, wave function and potential energy of the electron in CdSe0.35Te0.65 samples at a prearranged temperature was carried out. Using the supercell method, the types of point defects were established, as well as the temperature dependence of their ionization energies in the studied temperature range.