aprotic solvents

DEPOSITION OF NANOSTRUCTURED SILVER SEDIMENT ON SILICON SURFACE BY GALVANIC REPLACEMENT

One of the promising methods of such a modification is a method of galvanic replacement, which is characterized by wide possibilities of controlled influence on the morphology of the deposited nanostructured metal. The deposition of silver by galvanic replacement is most studied in aqueous solutions of AgNO3 in the presence of HF. However, the hydrolysis of formed compounds of silicon, the change in pH, and the electrical renewal of hydrogen do not always provide a controlled formation of metal nanoparticles.

Morphology of a dispersed tellurium electrochemical deposition in aprotic solvents

The electrolysis of TeCl4 solutions in dimethylsulfoxide, dimethylformamide and acetonitrile using soluble tellurium anodes has been investigated. At 313 K in 0.05 M TeCl4 over graphic undercoat the formation of compact tellurium deposit took place at cathode potentials less than 1.0 V and formation of dispersed deposit – at values more than 1.25-1.5 V. Using results of SEM researches it was established that dispersed tellurium formed