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  3. Volume 9, Number 2, 2019
  4. Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

JCPEE.
2019;
Volume 9, Number 2
: pp. 22-27
https://doi.org/10.23939/jcpee2019.02.022
Authors:
  1. Anatoliy Druzhynin
  2. Ihor Ostrovskyi
  3. Yuriy Khoverko
  4. Natalia Liakh-Kaguy
1
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
2
Lviv Polytechnic National University
3
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
4
Lviv Polytechnic National University

The influence of deformation on magnetoresistance features in indium antimonide and gallium antimonide whiskers of n-type conductivity with different doping concentration in the vicinity to the metal-insulator transition (MIT) has been investigated in the temperature range 4.2 – 50 K and the magnetic field 0 – 14 T. The Shubnikov-de Haas oscillations in the whole range of magnetic field inductions have been shown in deformed and undeformed whiskers. The amplitude of the magnetoresistance oscillations for both type of samples decreases in accordance with the increase in temperature. Berry phase existence under deformation influence has been also revealed at low temperatures in the indium antimonide and galium antimonide whiskers, that indicates their transition into the state of topological insulators.

indium antimonide and gallium antimonide whiskers; magnetoresistance; Shubnikov-de Haas oscillations; deformation; the Berry phase
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