рівень Фермі.

The results of modeling and experimental studies of the structural, magnetic, electrokinetic and energy properties of the thermometric material Hf1-xNbxNiSn, as well as the conversion functions of the sensitive elements of a thermoelectric thermometer based on it at temperatures of 4.2–1000 K are presented. For the case of an ordered variant of the crystal structure of the thermometric material, the simultaneous generation of donor and acceptor states in the forbidden band εg of the semiconductor is established.

The results of modeling the thermodynamic, structural, and kinetic properties of the thermometric material TiCo1-xCrxSb, x=0–0.10, as well as the conversion functions of sensitive elements of a thermoelectric converter based on it in the temperature range of 4.2–1000 K are presented. The results presented continue the research of sensitive elements of temperature converters based on basic semiconductor thermometric material TiCoSb.

The results of modeling the thermometric characteristics of the semiconductor solid solution Lu1–xZrxNiSb, which is a promising thermometric material for the manufacture of sensitive elements of thermoelectric and electro resistive thermocouples, are presented. Modeling of the electronic structure of Lu1–xZrxNiSb was performed by the Korringa–Kohn–Rostoker (KKR) method in the approximation of coherent potential and local density and by the full-potential method of linearized plane waves (FLAPW).