Si3N4

Fabrication and Tailoring the Morphological and Electrical Features of Silicon Nitride-Silicon Dioxide/Polymethyl Methacrylate Hybrid Nanocomposites for Nanoelectronics Fields

The goal of this research is to create PMMA and SiO2-Si3N4 nanoparticles doped PMMA films with enhanced structural and electrical properties to employ in various quantum electronics fields. The casting process was used to create the (PMMA-SiO2-Si3N4) nanocomposite films. In the development of nanocomposite materials, the hybrid nanocomposite films with 2.3%, 4.6% and 6.9% contents of nanoparticles were prepared. Using an optical microscope (OM), the morphology of the nanocomposites was examined.