EVALUATION OF LOW TEMPERATURE PARAMETERS OF EXCHANGE INTERACTION OF POLYCRYSTALLINE LAYERS IN SOI STRUCTURES
The article is devoted to the study of the peculiarities of charge carrier transfer in polycrystalline films in SOI structures doped with boron to concentrations corresponding to the metal-insulator transition. The magnetoresistance of polysilicon in SOI structures under the action of magnetic fields up to 14 T at temperatures of 4.2 K was studied. A detailed analysis of magnetic transport properties in poly-Si was performed.