Due to its unique optical and electrical properties of chalcogenides of zinc subgroup metals semiconductor thin films can be used in photovoltaic systems. The largest usage is acquired by CdS films. But due to its toxicity, there is considerable interest in replacing CdS with other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the candidates for replacing cadmium sulfide is chemically deposited mercury (II) chalcogenides films.
In this paper were reviewed and analyzed the main aspects of mercury (II) sulfide and mercury (II) selenide thin films synthesis by CBD. Attention is focused on choosing a method of chemical deposition due to the simplicity of its execution in technological term, possibility of the using different initial substances for the synthesis wide range of semiconductor thin films at temperatures up to 100ºC.
The basic synthesis conditions of mercury (II) chalcogenides thin films were analyzed. Examined their impact on the phase composition, optical and morphological properties of the films. In the majority of synthesis methods as a substrate serves glass or it’s different modifications: glass/SnO2, glass/MeS (where Ме – Pb, Cd, Zn), glass/ІТО and in some cases – polymers (polyester, plexiglas), Ті. The temperature of the working solution ranged from 5°C to 90°C. The film thickness directly proportional to the deposition time and is highly depend on the nature of the substrate and pre-processing. Conditions for obtaining and properties of mercury (II) sulfide and mercury (II) selenide thin films are consolidated in table.
In most of the works, the choice of the synthesis initial parameters is not argued, in the studies themselves did not observe a clear system. Also, no information about the studies of the influence of mercury (II) salt and the complexing reagents nature, systematization of the influence dependences of each individual factor on the physical and chemical properties of the HgS and HgSe films were found.
That is why, studies in this direction are necessary for a comprehensive understanding of the various factors influence on the HgS and HgSe films properties, the possibility of their synthesis with the necessary functional properties for the development of new thin-film semiconductor materials and for the improvement of already developed materials on their base.
Due to its unique optical and electrical properties of chalcogenides of zinc subgroup metals semiconductor thin films can be used in photovoltaic systems. The largest usage is acquired by CdS films. But due to its toxicity, there is considerable interest in replacing CdS with other semiconductor films with similar or even better properties obtained by chemical bath deposition (CBD). One of the candidates for replacing cadmium sulfide is chemically deposited mercury (II) chalcogenides films.
In this paper were reviewed and analyzed the main aspects of mercury (II) sulfide and mercury (II) selenide thin films synthesis by CBD. Attention is focused on choosing a method of chemical deposition due to the simplicity of its execution in technological term, possibility of the using different initial substances for the synthesis wide range of semiconductor thin films at temperatures up to 100ºC.
The basic synthesis conditions of mercury (II) chalcogenides thin films were analyzed. Examined their impact on the phase composition, optical and morphological properties of the films. In the majority of synthesis methods as a substrate serves glass or it’s different modifications: glass/SnO2, glass/MeS (where Ме – Pb, Cd, Zn), glass/ІТО and in some cases – polymers (polyester, plexiglas), Ті. The temperature of the working solution ranged from 5°C to 90°C. The film thickness directly proportional to the deposition time and is highly depend on the nature of the substrate and pre-processing. Conditions for obtaining and properties of mercury (II) sulfide and mercury (II) selenide thin films are consolidated in table.
In most of the works, the choice of the synthesis initial parameters is not argued, in the studies themselves did not observe a clear system. Also, no information about the studies of the influence of mercury (II) salt and the complexing reagents nature, systematization of the influence dependences of each individual factor on the physical and chemical properties of the HgS and HgSe films were found.
That is why, studies in this direction are necessary for a comprehensive understanding of the various factors influence on the HgS and HgSe films properties, the possibility of their synthesis with the necessary functional properties for the development of new thin-film semiconductor materials and for the improvement of already developed materials on their base.
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