The Peculiarities of the Radiation Defects Formation Kinetics in the Case of Defect Complexes Genesis

: pp. 88 - 96
Lviv Polytechnic National University
Lviv Polytechnic National University

The problem of determination of radiation defects accumulation kinetics is considered under the assumption of defects complexes formation, particlularly, the ones of anion and cation vacancies. Based on the system of differential equations, the analytical expression for doze dependencies of concentrations of defects and their complexes are obtained. As it is shown, the enrichment of the crystal by the defects with higher formation cross-section and the simultaneous depletion by the defects with lower one are taking place at sufficiently high fluences of radiation (about 1018 cm—2). At that the doze dependencies for the defects with lower cross-section have got the maxima. The flex points are observed on the doze dependenices of concentrations of defects and their complexes at the same value of the fluence. These peculiarities are typical for the doze dependencies in the case of complexes formation and can be used for identification of this process during experimental studies. The typical peculiarities of the processes observed under crystal irradiation are also determined by calculations and analysis that are carried out for the set of parameters characterizing the intensity of irradiation, the probability of defects formation and the velocity of complexes accumulation. The obtained mathematical model can be used for analysis of doze dependencies for different crystalline materials used in solid-state electronics and photonics.

1. Kharisov B. I., Kharissova O. V. and Mendez U. O. (2013) Radiation Synthesis of Materials and Compounds, Boca Raton — London — New York, SRC Press. 2. Курносов А. И., Юдин В. В. (1986) Технология производства полупроводниковых приборов и интегральных микросхем. — М.: Высшая школа, 1986. 3. Матковский А. О., Сугак Д. Ю, Убизский С. Б., Шпотюк О. И., Черный Е. А., Вакив Н. М., Мокрицкий В. А. (1996), Воздействие ионизирующих излучений на материалы электронной техники, — Львов: Світ. 4. Реутов В. Ф., Дмитриев С. Н. (2002). Ионно-трековая нанотехнология. Российский химический журнал, 2002, т. 46, № 5, с. 74–80. 5. Sugak D., Matkovski A., Durygin A., Suchocki A., Solskii I., Ubizskii S., Kopczynski K., Mierczyk Z (1999) Influence of color centers on optical and lasing properties of the gadolinium gallium garnet single crystals doped with Nd3+ ions. J. Luminescence, vol. 82, no. 1, pp. 9–15. 6. Ubizskii S, Matkovskii A, Mironova-Ulmane N, Skvortsova V, Suchocki A, Zhydachevskii Ya and Potera P (2000), “Displacement defect formation in complex oxide crystals under irradiation”, J. Luminescence, vol. 177, no. 2, pp. 349–366. 7. Ubizskii S., Matkovskii A. and Kholyavka R. and Rak M. (1993) Investigation of Radiation-Stimulated Processes in Epitaxial Yttrium-Iron Garnet Films. J. Magn. & Magn. Mat., vol. 125, pp. 110–112. 8. Ubizskii S., Matkovski A. and Kuzma M. (1996) Irradiation-induced effects in yttrium — iron garnet films. J. Magn. & Magn. Mat., vol. 157/158, pp. 279–280. 9. Bury O., Ubizski S. and Potera P. (2008) The kinetics of radiation defect accumulation in oxide crystals. Radiation Effects and Defects in Solids, vol. 163, no. 8, pp. 713–727. 10. Zhydachevskii Ya., Fidelus J. D., Luchechko A., Cabaj A., Pieniążek A., Berkowski M., Suchocki A., Martinez I. C. and Garciae J. R. (2015) Solid-state and solar sintering of YAP: Mn, Hf ceramics applicable for thermoluminescent dosimetry. Optical Materials, vol. 45, pp. 246–251. 11. Zhydachevskii Ya., Morgun A., Dubinski S., Yan Yu, Glowacki M., Ubizskii S., Chumak V., Berkowski M. and Suchocki A. (2016) Energy response of the TL detectors based on YAlO3: Mn crystals. Radiation Measurments, vol. 90, pp. 262–264. 12. Камкэ Э. (1976) Справочник по обыкновенным дифференциальным уравнениям. — М.: Наука. 13. Prado L, Gomes L., Baldochi S., Morato S. and Vieira Jr. N (1998) Electron-irradiation-induced defects in BaLiF3 crystals. J. Phys.: Condens. Matter, vol. 10, no. 37, pp. 8247–8256.