The problem of determination of radiation defects accumulation kinetics is considered under the assumption of defects complexes formation, particlularly, the ones of anion and cation vacancies. Based on the system of differential equations, the analytical expression for doze dependencies of concentrations of defects and their complexes are obtained. As it is shown, the enrichment of the crystal by the defects with higher formation cross-section and the simultaneous depletion by the defects with lower one are taking place at sufficiently high fluences of radiation (about 1018 cm—2). At that the doze dependencies for the defects with lower cross-section have got the maxima. The flex points are observed on the doze dependenices of concentrations of defects and their complexes at the same value of the fluence. These peculiarities are typical for the doze dependencies in the case of complexes formation and can be used for identification of this process during experimental studies. The typical peculiarities of the processes observed under crystal irradiation are also determined by calculations and analysis that are carried out for the set of parameters characterizing the intensity of irradiation, the probability of defects formation and the velocity of complexes accumulation. The obtained mathematical model can be used for analysis of doze dependencies for different crystalline materials used in solid-state electronics and photonics.
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