коефіцієнт термо-ерс.

The results of a complex study of the semiconductor thermometric material TiСo1-xMnxSb, х=0.01–0.10, for the producing of sensitive elements of thermoelectric and electro resistive sensors are presented. Microprobe analysis of the concentration of atoms on the surface of TiСo1-xMnxSb samples established their correspondence to the initial compositions of the charge, and X-ray phase analysis showed the absence of traces of extraneous phases on their diffractograms.

The second part of the complex research of Ti1-xScxCoSb thermometric material for the sensitive elements of thermoelectric and electro resistant thermal converters is presented. Simulation of thermodynamic, electrotechnical, energetic and structural characteristics of Ti1-xScxCoSb semiconductor thermometric material for various options of atoms placement is performed.