Peculiarities of low-temperature gallium arsenide crystallization under varying cooling rates
The parameters of GaAs epitaxial layers grown by the low-temperature LPE method in the temperature range of 600–500 °C under varying cooling rates and different degrees of supercooling (5 °C, 10 °C, and 15 °C) of the gallium solution-melt were calculated. To achieve maximum cooling rates, a method involving the introduction of a cold body above the graphite cassette was used to cool the substrate–melt interface, enabling a change in the cooling rate from 5 °C/min to 14 °C/min within 230 seconds.