gallium arsenide

Peculiarities of low-temperature gallium arsenide crystallization under varying cooling rates

The parameters of GaAs epitaxial layers grown by the low-temperature LPE method in the temperature range of 600–500 °C under varying cooling rates and different degrees of supercooling (5 °C, 10 °C, and 15 °C) of the gallium solution-melt were calculated. To achieve maximum cooling rates, a method involving the introduction of a cold body above the graphite cassette was used to cool the substrate–melt interface, enabling a change in the cooling rate from 5 °C/min to 14 °C/min within 230 seconds.

Physical Topological Aspects of Modeling Gallium Arsenide Super Beta Transistor for Speed Lic Ofcomputer Systems

Among the semiconductors in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits because of the high charge carrier mobility in GaAs with a frequency range of operation of reach for chips based on silicon (Si).