Peculiarities of low-temperature gallium arsenide crystallization under varying cooling rates

The parameters of GaAs epitaxial layers grown by the low-temperature LPE method in the temperature range of 600–500 °C under varying cooling rates and different degrees of supercooling (5 °C, 10 °C, and 15 °C) of the gallium solution-melt were calculated. To achieve maximum cooling rates, a method involving the introduction of a cold body above the graphite cassette was used to cool the substrate–melt interface, enabling a change in the cooling rate from 5 °C/min to 14 °C/min within 230 seconds. It was found that under these conditions, it is possible to crystallize layers with maximum thicknesses of 7.5 μm, 10 μm, and 12 μm, respectively. The obtained theoretical results show good agreement with experimental data. The crystallized GaAs epitaxial layers can be used in the fabrication of various terahertz-range devices.   

арсенід галію
epitaxial layer
variable cooling rate
terahertz range
  1. Sobolewski, Jakub & Yashchyshyn, Yevhen. (2022). State of the Art Sub-Terahertz Switching Solutions. IEEE Access. 10. 1-1. 10.1109/ACCESS.2022.3147019.
     https:// doi.org/10.1109/ACCESS.2022.3147019
  2. J. P. Afalla, V. K. Mag-usara, T. Moriyasu, H. Kitahara, and M. Tani, "LT-GaAs carrier lifetime evaluation using THz and optical probe techniques at different carrier injection levels," in JSAP-OSA Joint Symposia 2017 Abstracts, (Optica Publishing Group, 2017), paper 7a_A409_8.
    https://doi.org/10.1364/JSAP.2017.7a_A409_8
  3. K. Moon et al., “Generation and detection of terahertz waves using low-temperature-grown GaAs with an annealing process,” ETRI J. 36, 159–162 (2014).
    https://doi.org/ 10.4218/etrij.13.0213.0319
  4. A. Grange, “Terahertz spectroscopy: an investigation into the use of terahertz radiation to detect/sense drugs, pharmaceuticals and polymorphs,” Thesis, University of Leeds (2010).
  5. Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials Peter Capper,  Michael Mauk //Wiley  ISBN: 978-0-470-85290-3, September 2007, 464 pages.
  6. H.Casey and M. Panish, "Lasers in Heterostructures (Volume 2)," Mir, 1981.
  7. Krukovskyi S.I., et al., «Features of Low-Temperature GaAs Formation for Epitaxy Device Structures», Journal of Nano- and Electronic Physics/ V.14? № 2, 02016-1 - 02016-5, 2022.
    https://doi.org/10.21272/jnep.14(2).02016
  8. M. Haaser et al., “Terahertz pulsed imaging as an advanced characterisation tool for film coatings – a review,” Int. J. Pharm. 457, 510–520 (2013).
    https://doi.org/10.1016/ j.ijpharm.2013.03.053
    https://doi.org/10.1088/1475-7516/2013/10/053