InSb microcrystals for sensor electronics
The processes of electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb with the defect concentration of 3 ×1017 cm-3 are considered. The temperature dependences of electron mobility ranged between 4,2 K and 500 К are calculated.