InSb microcrystals for sensor electronics

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Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Lviv Polytechnic National University
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Lviv Polytechnic National University
Institute of Low Temperature and Structure Research of the Polish Academy of Sciences

The processes of electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb with the defect concentration of 3 ×1017 cm-3 are considered. The temperature dependences of electron mobility  ranged between 4,2 K and 500 К are calculated. Based on the InSb whiskers, there was elaborated a highly sensitive Hall sensor operating in the wide range of temperatures between 4,2 K and 500 K and magnetic fields (up to 10 T) with a sensitivity of ~ 3,5 mV/T.

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