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  4. InSb microcrystals for sensor electronics

InSb microcrystals for sensor electronics

JCPEE.
2014;
Volume 4, Number 1
: pp.1-6
Authors:
  1. Anatoliy Druzhynin
  2. Ihor Ostrovskyi
  3. Yuriy Khoverko
  4. Іhor Khytruk
  5. Krzysztof Rogacki
1
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
2
Lviv Polytechnic National University
3
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
4
Lviv Polytechnic National University
5
Institute of Low Temperature and Structure Research of the Polish Academy of Sciences

The processes of electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb with the defect concentration of 3 ×1017 cm-3 are considered. The temperature dependences of electron mobility  ranged between 4,2 K and 500 К are calculated. Based on the InSb whiskers, there was elaborated a highly sensitive Hall sensor operating in the wide range of temperatures between 4,2 K and 500 K and magnetic fields (up to 10 T) with a sensitivity of ~ 3,5 mV/T.

Charge carrier scattering
the Hall effect
mobility
InSb microcrystals
sensor
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