напівпровідник

On the example of semiconductor crystals Ge, Si, PbTe, PbS, InSb with different levels of doping and different types of conductivity, the geometry of the piezoresistive effect was optimized, namely, such directions of voltage measuring and uniaxial pressure applying were determined, which ensure the maximum achievable value of the effect. The optimization is based on an approach using the construction and analysis of extreme surfaces that represent all possible maxima of the objective function (the magnitude of the effect) under different spatial orientations of interacting factors.

The complex of technological and metrological researches concerning development of filamentous monocrystals application and fixing methods on various materials of substrate (elastic elements) is considered. The ways of uncontrolled distortions avoiding of the initial monocrystal defect-free structure that can occur at the nodes of its mounting and reduce the Q-value of the resonator oscillations, which is the main characteristic of the tensotransducer quality, is shown.