polysilicon

EVALUATION OF LOW TEMPERATURE PARAMETERS OF EXCHANGE INTERACTION OF POLYCRYSTALLINE LAYERS IN SOI STRUCTURES

The article is devoted to the study of the peculiarities of charge carrier transfer in polycrystalline films in SOI structures doped with boron to concentrations corresponding to the metal-insulator transition. The magnetoresistance of polysilicon in SOI structures under the action of magnetic fields up to 14 T at temperatures of 4.2 K was studied. A detailed analysis of magnetic transport properties in poly-Si was performed.

Accelerometer sensing element based on nanostructured silicon

In this work we consider sensing elements of an accelerometer which is made using the combined technologies of silicon-on-insulator (SOI) structures and silicon nanocrystals whiskers manufacturing. On their basis a quick-response, high sensitive to acceleration and displacement device with submicrometer and nanometer typological sizes has been designed.