Accelerometer sensing element based on nanostructured silicon

: pp. 11-16
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Vasyl Stefanyk Precarpathian National University
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Vasyl Stefanyk Precarpathian National University

In this work we consider sensing elements of an accelerometer which is made using the combined technologies of silicon-on-insulator (SOI) structures and silicon nanocrystals whiskers manufacturing. On their basis a quick-response, high sensitive to acceleration and displacement device with submicrometer and nanometer typological sizes has been designed. This enabled us to create, on its basis, both a discrete device and an element of integrated nanoelectromechanical element silicon-on-insulator structures, which provides control of displacement up to 200 nm.

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