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  3. Volume 3, Number 1, 2013
  4. Accelerometer sensing element based on nanostructured silicon

Accelerometer sensing element based on nanostructured silicon

JCPEE.
2013;
Volume 3, Number 1
: pp. 11-16
Authors:
  1. Anatoliy Druzhynin
  2. Ihor Kogut
  3. Yuriy Khoverko
  4. Viktor Golota
1
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
2
Vasyl Stefanyk Precarpathian National University
3
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
4
Vasyl Stefanyk Precarpathian National University

In this work we consider sensing elements of an accelerometer which is made using the combined technologies of silicon-on-insulator (SOI) structures and silicon nanocrystals whiskers manufacturing. On their basis a quick-response, high sensitive to acceleration and displacement device with submicrometer and nanometer typological sizes has been designed. This enabled us to create, on its basis, both a discrete device and an element of integrated nanoelectromechanical element silicon-on-insulator structures, which provides control of displacement up to 200 nm.

accelerometer
polysilicon
structure silicon-on-insulator
etching
nanoelectromechanical system.
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