chemical surface deposition

Methods of obtaining of cds and cdse films and heterostructures on their basis. Review

Alternative and renewable sources of energy, such as wind and solar energy, hydro and geothermal energy, are attracting increasing attention all over the world. The growing interest in them is caused by environmental considerations, on the one hand, and the limited traditional earth resources - on the other. A special place among them is occupied by photovoltaic converters of solar energy.

Створення і властивості фоточутливих гетероструктур n-cds/p-cdte

This article shows how thin films n-CdS were deposited on p-CdTe substrates by the new chemical surface deposition method. The composition and crystallinity degree of obtained coatings were studied. The high value of n-CdS/p-CdTe heterojunction photoconversion was provided by using the new CdS deposition method. The possibility of n-CdS/p-CdTe thin film solar cell fabrication by chemical surface deposition method was demonstrated. Розроблена технологія хімічного поверхневого осадження і отримано тонкі плівки CdS на підкладках p-CdTe. Вивчено склад та структуру отриманих покрить.

Синтез плівок цинк сульфіду (ZnS) методом хімічного поверхневого осадження

CdS thin films were obtained from aqueous solution of zinc sulphate salt on glass substrates by chemical surface deposition (CSD) method. The optical absorption spectra, surface morphology and degree of crystallinity obtained ZnS films by terms of conditions were studied.
Синтезовано плівки ZnS методом хімічного поверхневого осадження (ХПО) з водного розчину солі цинк сульфату на скляні підкладки. Досліджено оптичні властивості, морфологію поверхні, ступінь кристалічності плівок ZnS в залежності від умов осадження.

 

The Conditions Effect of Obtaining CdS and CdSe Films on their Structural and Optical Properties

The conditions effect of obtaining CdS and CdSe thin films by a chemical surface deposition method (CSD) on their structural and optical properties has been studied. The optical transmission, absorption spectra and surface morphology of films and degree of phase uniformity were investigated. The content of cadmium ions in the obtained coatings by the method of voltammetry inversion was defined. The thickness of the obtained semiconductor films was calculated according to the mass of cadmium.

Modeling of Chemical Surface Deposition (CSD) of CdS and CdSe Semiconductor Thin Films

A mathematical model of the chemical surface deposition process of CdS and CdSe thin films, which allows determining the concentration of reagents, as well as duration and temperature for CSD needed to obtain films of the set thickness was designed. The adequacy of model was tested by Fisher's criterion. The nomogram of dependence of cadmium ions content on the initial deposition parameters was built according to the results of experimental studies and approximated by mathematical dependence.