Reconstruction of the depletion layer in MOSFET by genetic algorithms

In this work, the MOSFET device is considered.  The carrier densities in the MOSFET are modeled by the drift-diffusion equation.  We manipulate the formulas of the charge density at the equilibrium in order to derive a simple Poisson's or Laplace's equation.  To formulate a shape optimization problem, we have defined a cost functional.  The existence of an optimal solution is proved.  To solve the involved optimization problem, we have designed a numerical approach based on the finite element method combined with the genetic algorithm.  Several numerical examples are established to prove the validity of the proposed approach.

напівпровідник
shape optimization
finite element
генетичний алгоритм
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