1. Volume 1, Number 1, 2021
  2. Strain gages based on gallium arsenide whiskers

Strain gages based on gallium arsenide whiskers

ICTEE.
2021;
Volume 1, Number 1
: 128-133
https://doi.org/10.23939/ictee2021.01.128
Authors:
  1. A. Druzhinin
  2. Oleksiy Kutrakov
  3. Ihor Ostrovskyi
  4. Natalia Liakh-Kaguy
  5. Dmytro Chemerys
1
Lviv Polytechnik National University
2
Lviv Polytechnic National University
3
Lviv Polytechnic National University
4
Lviv Polytechnic National University
5
Lviv Polytechnic National University

Strain-resistant properties of GaAs whiskers and ribbons of p- and n-type conductivity with various
length (0.3–7 mm) and diameter (10–40 μm) have been investigated in a wide range of
temperatures. Strain gages based on heavily doped p-type conductivity GaAs whiskers have linear
deformation characteristics and a weak temperature dependence of strain sensitivity in the
temperature range from –20 to +3500 °C. The temperature coefficient of resistance (TСR) of not
fixed strain gages is about +(0.12–0.16)% × grad–1. The temperature coefficient of strain sensitivity
is –0.03 % × deg–1 in the temperature range –120+800 °C. Strain gages based on n-type GaAs
ribbons are characterized by high flexibility and high strain sensitivity. They are capable up to
+4000 °C and can be used to measure deformations on curved surfaces at high temperatures. TСR
of not fixed strain gages is –0.01 +0.03 % × grad–1. The temperature coefficient of strain sensitivity
is –0.16% × deg–1 in the temperature range –120 ... +4000 °С.

whiskers
ribbons
GaAs
strain gages
temperature coefficient of strain sensitivity
temperature coefficient of resistance
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