Physical quantity sensors of extended functionality based on silicon whiskers

: pp. 67-74
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Lviv Polytechnic National University
Lviv Polytechnic National University, International Laboratory of High Magnetic Fields and Low Temperatures
Lviv Polytechnic National University

The constructive and technological features of creating a sensitive element of physical quantity sensors of extended functionality based on p-type boron-doped silicon whiskers grown by a chemical vapour deposition (CVD) are considered. In the paper we investigate the effect of the Si whisker resistivity on the temperature of an output signal. The distribution of a temperature field is simulated to calculate stationary and dynamic cases in varying both the geometry of contacts placement and the values of thermal conductivity of insulating material and environment. An analysis of computer simulation of the distribution of mechanical stress and deformation in the elements of a pressure sensor, including thermal stress and deformation is  conducted to take into account the effect of thermal stresses on the measurement accuracy. The operating temperature range of a sensor (213K-423K) and possible application areas have been defined. A digitizing circuit diagram based on microcontrollers is offered for further signal processing.

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