silicon

The work proposes the use of a unique method of creating passive, multifunctional, non-contact pressure-temperature sensors. The basis of this method is a combination of inorganic semiconductors and high-molecular organic cholesteric crystals. According to their morphology, such crystals represent a spiral structure that is sensitive to changes in external physical factors, such as temperatures, due to changes in the periodicity of the structure, which leads to Bragg diffraction scattering of light on it.

This research has produced multicomponent titanium-doped chromium coatings to strengthen the working surfaces of press tooling dies operated under aggressive conditions during the vulcanization of products from new elastomeric materials. The pressing was carried out on a hydraulic vulcanization press 100-400 2E.

In this work, the field distribution in structures such as a gold grating, a graphene layer, and a silicon substrate was studied. The conditions for maximum electromagnetic field distribution (absorption) by this structure to use in photonics and electronics devices were established. The magnitude of the electromagnetic field of a gold diffraction grating with a graphene layer increases with decreasing slit width. At the same time, an increase in the period leads to small changes in the electromagnetic field distribution.

The investigation results of silver, palladium and gold nanoscale particles deposition on the silicon surface in the DMSO and DMF media are presented. The influence of organic aprotic solvents on the geometry of metal particles and their distribution on the substrate is described. It is shown that solutions of stable metal complexes ([Ag (CN)2] – , [AuCl4] – ) are the main factor in the formation of discrete nanoparticles with a small range of sizes and uniform distribution along the substrate surface, as well as nanostructured films.

Among the semiconductors in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits because of the high charge carrier mobility in GaAs with a frequency range of operation of reach for chips based on silicon (Si).