mobility

InSb microcrystals for sensor electronics

The processes of electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb with the defect concentration of 3 ×1017 cm-3 are considered. The temperature dependences of electron mobility  ranged between 4,2 K and 500 К are calculated.

Бінарні відношення обмежень рухливості – основа математичного опису складальних виробів

The paper proposes a methodology for the mathematical description of elements assembly units through binary relations mobility limitations. It is shown that such relations should be defined for pairs of parts for the conditions of the initial position, the possible movement of the fixation conditions of integrity.