1. JCCT
  2. Всі випуски
  3. Випуск 17, Номер 2, 2023
  4. Модифікація поверхні арсеніду галію електрохімічними методами в різних композиціях електролітів

Модифікація поверхні арсеніду галію електрохімічними методами в різних композиціях електролітів

JCCT.
2023;
Випуск 17, Номер 2
: cc. 262 - 271
https://doi.org/10.23939/chcht17.02.262
Автори:
  1. Yana Suchikova
  2. Sergii Kovachov
  3. Andriy Lazarenko
  4. Hanna Lopatina
  5. Natalia Tsybuliak
  6. Olha Нurenko
  7. Ihor Bohdanov
1
Berdyansk State Pedagogical University
2
Berdyansk State Pedagogical University
3
Berdyansk State Pedagogical University
4
Berdyansk State Pedagogical University
5
Berdyansk State Pedagogical University
6
Berdyansk State Pedagogical University
7
Berdyansk State Pedagogical University

Представлено дослідження модифікації поверхні n-GaAs методом електрохімічного травлення в різних композиціях електролітів. Досліджено можливість формування різних типів мікроморфології на ідентичних зразках GaAs, зокрема формування кристалографічних, дефектно-дислокаційних та ізотопних інтерфейсів.

мікроморфологія
електрохімічне травлення
електрохімічна реакція
електроліт
напруга анодування
  1. Fiuczek, N.; Sawicka, M.; Feduniewicz-Żmuda, A.; Siekacz, M.; Żak, M.; Nowakowski-Szkudlarek, K.; Muzioł, G.; Wolny, P.; Kelly, J.J.; Skierbiszewski, C. Electrochemical Etching of p-Type GaN Using a Tunnel Junction for Efficient Hole Injection. Acta Mater. 2022, 234, 118018. https://doi.org/10.1016/j.actamat.2022.118018
  2. Suchikova, Ya. Porous Indium Phosphide: Preparation and Properties. In Handbook of Nanoelectrochemistry: Electrochemical Synthesis Methods, Properties, and Characterization Techniques; Springer, 2016; pp 283-306.
  3. Surmeneva, M.A.; Khrapov, D.; Prosolov, K.; Kozadayeva, M.; Koptyug, A.; Volkova, A.; Surmenev, R.A. The Influence of Chemical Etching on Porous Structure and Mechanical Properties of the Ti6AL4V Functionally Graded Porous Scaffolds Fabricated by EBM. Mater. Chem. Phys. 2022, 275, 125217. https://doi.org/10.1016/j.matchemphys.2021.125217
  4. Suchikova, J.A.; Kidalov, V.V.; Sukach, G.A. Preparation of Nanoporous n-InP(100) Layers by Electrochemical Etching in HCI Solution. Funct. Mater. 2010, 17, 131-134.
  5. Sychikova, Y.O.; Bogdanov, I.T.; Kovachov, S.S. Influence of Current Density of Anodizing on the Geometric Characteristics of Nanostructures Synthesized on the Surface of Semiconductors of A3B5 Group and Silicon Funct. Mater. 2019, 27, 29-34. https://doi.org/10.15407/fm27.01.29
  6. Weyher, J.L.; van Dorp, D.H.; Conard, T.; Nowak, G.; Levchenko, I.; Kelly, J.J. Chemical Etching of GaN in KOH Solu-tion: Role of Surface Polarity and Prior Photoetching. J. Phys. Chem. C 2022, 126, 1115-1124. https://doi.org/10.1021/acs.jpcc.1c06528
  7. Çepni, E.; Özer, T.Ö. Electrochemical Deposition of Indium (III) Hydroxide Nanostructures for Novel Battery-Like Capacitive Materials. J. Energy Storage 2022, 45, 103678. https://doi.org/10.1016/j.est.2021.103678
  8. Han, Z.; Zhang, R.; Li, M.; Li, L.; Geng, D.; Hu, W. Recent Advances in Controlled Chemical Vapor Deposition Growth of Bilayer 2D Single Crystals. J. Mater. Chem. C 2022, 10, 13324-13350. https://doi.org/10.1039/D2TC01095J
  9. Heidarpour, A.; Faraji, M.; Haghighi, A. Production and Characterization of Carbide-Derived-Nanocarbon Structures Obtained by HF Electrochemical Etching of Ti3AlC2. Ceram. Int. 2022, 48, 11466-11474. https://doi.org/10.1016/j.ceramint.2022.01.003
  10. Suchikova, Y.A.; Kidalov, V.V.; Sukach, G.A. Influence of Type Anion of Electrolit on Morphology Porous InP Obtained by Electrochemical Etching. Journal of Nano- and Electronic Physics 2009, 1, 78-86.
  11. Roldan, T.; Méndez-Blas, A.; López-Cruz, E.; Calixto, M. E. Semiconducting Cu2Se Thin Films Obtained by Electrochemical Deposition for Possible Applications in Thermoelectric Systems. MRS Adv. 2022, 7, 1-4. https://doi.org/10.1557/s43580-021-00197-9
  12. Çetinel, A. Characterization of Octahedral Cu2O Nanostruc-tures Grown on Porous Silicon by Electrochemical Deposition. Mater. Chem. Phys. 2022, 277, 125532. https://doi.org/10.1016/j.matchemphys.2021.125532
  13. Abouelata, A.M.A.; Attia, A.; Youssef, G.I. Electrochemical Polishing Versus Mechanical Polishing of AISI 304: Surface and Electrochemical Study. J. Solid State Electrochem. 2022, 26, 121-129. https://doi.org/10.1007/s10008-021-05037-2
  14. Suchikova, Y.O. Sulfide Passivation of Indium Phosphide Porous Surfaces. Journal of Nano- and Electronic Physics 2017, 9, 01006. http://dx.doi.org/10.21272/jnep.9(1).01006
  15. Zeng, Y.; Gossage, Z.T.; Sarbapalli, D.; Hui, J.; Rodríguez‐López, J. Tracking Passivation and Cation Flux at Incipient Solid‐Electrolyte Interphases on Multi‐Layer Graphene using High Resolution Scanning Electrochemical Microscopy. ChemElectroChem 2022, 9, e202101445. https://doi.org/10.1002/celc.202101445
  16. Guo, H.; Cao, S.; Li, L.; Zhang, X. A Review on the Main-stream Through-Silicon via Etching Methods. Mater. Sci. Semicond. Process. 2022, 137, 106182. https://doi.org/10.1016/j.mssp.2021.106182
  17. Suchikova, Y.A.; Kidalov, V.V.; Sukach, G.A. Influence of the Carrier Concentration of Indium Phosphide on the Porous Layer Formation. Journal of Nano- and Electronic Physics 2010, 2, 75-81.
  18. Vambol, S.; Vambol, V.; Suchikova, Y.; Deyneko, N. Analysis of the Ways to Provide Ecological Safety for the Products of Nanotechnologies Throughout their Life Cycle. East.-Eur. J. Enterp. Technol. 2017, 1, 27-36. https://doi.org/10.15587/1729-4061.2017.85847
  19. Ge, D.; Rezk, A.; Zhao, C.; Hu, Z.; Zhang, L. Experimental Research on Damage and Formation Limits on Porous Silicon Materials by Electrochemical Etching Method. J. Mater. Res. 2022, 37, 876-886. https://doi.org/10.1557/s43578-021-00471-4
  20. Dawood, N.S.; Zayer, M.Q.; Jawad, M.F. Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical. Journal of Applied Sciences and Nanotechnology 2022, 2, 28-36. https://doi.org/10.53293/jasn.2021.3763.1041
  21. Shushanian, A.; Iida, D.; Zhuang, Z.; Han, Y., Ohkawa, K. Analysis of the n-GaN Electrochemical Etching Process and its Mechanism in Oxalic Acid. RSC Adv. 2022, 12, 4648-4655. https://doi.org/10.1039/D1RA07992A
  22. Suchikova, Y.A.; Kidalov, V.V.; Sukach, G.A. Influence of Dislocations on the Process of Pore Formation in n-InP (111) Single Crystals. Semiconductors 2011, 45, 121-124. https://doi.org/1134/S1063782611010192
  23. Atrashchenko, A.V.; Katz, V.N.; Ulin, V.P.; Evtikhiev, V.P.; Kochereshko, V.P. Fabrication and Optical Properties of Porous InP Structures. Physica E Low Dimens. Syst. Nanostruct. 2012, 44, 1324-1328. https://doi.org/10.1016/j.physe.2012.02.012
  24. Karipbayev, Z.T.; Kumarbekov, K.; Manika, I.; Dauletbekova, A; Kozlovskiy, A.; Sugak, D.; Ubizskii, S.; Akilbekov, A.; Suchi-kova, Y., Popov, A.I. Optical, Structural, and Mechanical Proper-ties of Gd3Ga5O12 Single Crystals Irradiated with 84Kr+ Ions. Phys. Status Solidi B Basic Res. 2022, 259, 2100415. https://doi.org/10.1002/pssb.202100415
  25. Popov, A.I.; Balanzat, E.F Centre Production in CsI and CsI-Tl Crystals under Kr Ion Irradiation at 15 K. Nucl. Instrum. Methods Phys. Res. B 2000, 166, 545-549. https://doi.org/10.1016/S0168-583X(99)00789-2
  26. Cao, X.; Zhang, Y.; Ma, C.; Wang, Y.; Brechtken, B.; Haug, R. J.; Rugeramigabo, E.P.; Zopf, M.; Ding, F. Local Droplet Etching on InAlAs/InP Surfaces with InAl Droplets. AIP Adv. 2022, 12, 055302. https://doi.org/10.1063/5.0088012
  27. Kovachov, S.S.; Bogdanov, I.T.; Pimenov, D.O.; Bondarenko, V.; Konovalenko, A.; Skurska, M.; Konovalenko, I.S.; Suchikova, Y.O. Chemical Evaluation of the Quality of Nanostructures Synthe-sized on the Surface of Indium Phosphide. Arch. Mater. Sci. Eng. 2021, 110, 18-26. https://doi.org/10.5604/01.3001.0015.3592
  28. Monaico, E.V.; Morari, V.; Ursaki, V.V.; Nielsch, K.; Tiginyanu, I.M. Core-Shell GaAs-Fe Nanowire Arrays: Fabrication Using Electrochemical Etching and Deposition and Study of Their Magnetic Properties. Nanomaterials 2022, 12, 1506. https://doi.org/10.3390/nano12091506
  29. Vambol, S.O.; Bogdanov, I.T.; Vambol, V.V.; Suchikova, Ya.O.; Kovachov, S.S. Correlation between Technological Factors of Synthesis of por-GaP and its Acquired Properties. Nanosystemy, Nanomaterialy, Nanotehnologii 2018, 16, 657-670.
  30. Suchikova, Y.; Lazarenko, A.; Kovachov, S.; Usseinov, A.; Karipbaev, Z.; Popov, A. I. Formation of Porous Ga2O3/GaAs Layers for Electronic Devices. In 2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET); Lviv-Slavske, 2022. https://doi.org/10.1109/TCSET55632.2022.9766890
  31. Dontsova, T.; Kutuzova, A.; Hosseini-Bandegharaei, A. Cha-racterization and Properties of Titanium (IV) Oxide, Synthesized by Different Routes. Chem. Chem. Technol. 2021, 15, 465-474. https://doi.org/10.23939/chcht15.04.465
  32. Deivasigamani, P.; Ponnusamy, S.K., Sundararaman, S.; Suresh, A. Superhigh Adsorption of Cadmium (II) Ions onto Surface Modified Nano Zerovalent Iron Composite (CNS-nZVI): Characterization, Adsorption Kinetics and Isotherm Studies. Chem. Chem. Technol. 2021, 15, 457-464. https://doi.org/10.23939/chcht15.04.457
  33. Prudius, S.; Hes, N.; Trachevskiy, V.; Khyzhun, O.; Brei, V. Superacid ZrO2-SiO2-SnO2 Mixed Oxide: Synthesis and Study. Chem. Chem. Technol 2021, 15, 336-342. https://doi.org/10.23939/chcht15.03.336
  34. Beji, L.; Sfaxi, L.; Ismail, B.; Zghal, S.; Hassen, F.; Maaref, H. Morphology and Photoluminescence Studies of Electrochemically Etched Heavily Doped p-Type GaAs in HF Solution. Microelec-tronics J. 2003, 34, 969-974. https://doi.org/10.1016/S0026-2692(03)00183-6
  35. Langa, S.; Tiginyanu, I.M.; Carstensen, J.; Christophersen, M.; Föll, H. Formation of Porous Layers with Different Morphologies during Anodic Etching of n‐InP. Electrochem. solid-state lett. 2000, 3, 514-516.
  36. Spiecker, E.; Rudel, M.; Jäger, W.; Leisner, M.; Föll, H. Mor-phology, Interface Polarity and Branching of Electrochemically Etched Pores in InP. Phys. Status Solidi A 2005, 202, 2950-2962. https://doi.org/10.1002/pssa.200521098
  37. Guo, N.; Xue, H.; Bao, A.; Wang, Z.; Sun, J.; Song, T.; Ge, X.; Zhang, W.; Huang, K.; He, F. et al. Achieving Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process. Angew. Chem. 2020, 132, 13882-13888. https://doi.org/10.1002/ange.202002394
  38. Faktor, M.M.; Stevenson, J.L. The Detection of Structural Defects in GaAs by Electrochemical Etching. J. Electrochem. Soc. 1978, 125, 621. https://doi.org/10.1149/1.2131512
  39. Bohdanov, I.; Suchikova, Y.; Kovachov, S.; Peregudova, V.; Dauletbekova, A.K.; Popov, A.I. Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group. In 2021 IEEE 12th International Conference on Electronics and Information Technologies, ELIT 2021; Lviv, 2021; pp 190-193. https://doi.org/10.1109/ELIT53502.2021.9501107
  40. Naddaf, M. Formation of Superhydrophobic Porous GaAs Layer: Effect of Substrate Doping Type. Bull. Mater. Sci. 2022, 45, 89. https://doi.org/10.1007/s12034-021-02639-4
  41. Bioud, Y. A.; Boucherif, A.; Belarouci, A.; Paradis, E.; Drouin, D.; Arès, R. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale Res. Lett. 2016, 11, 446. https://doi.org/10.1186/s11671-016-1642-z
  42. Vambol, S.; Bogdanov, I.; Vambol, V.; Lopatina, H.; Tsybu-liak, N. Research into Effect of Electrochemical Etching Conditions on the Morphology of Porous Gallium Arsenide. East.-Eur. J. Enterp. Technol. 2017, 6, 22-31. https://doi.org/10.15587/1729-4061.2017.118725
  43. Suchikova, Y.O.; Kovachov, S.S.; Lazarenko, A.S.; Bardus, I.O.; Tikhovod, K.; Hurenko, O.I.; Bohdanov, I.T. Oxidation of the n-GaAs Surface: Morphological and Kinetic Analysis. Journal of Nano- and Electronic Physics 2022, 14, 03033. https://doi.org/10.21272/jnep.14(3).03033
  44. Vambol, S.O.; Bohdanov, I.T.; Vambol, V.V.; Suchikova, Y.O.; Kondratenko, O.M.; Nestorenko, T.P.; Onyschenko, S.V. Formation of Filamentary Structures of Oxide on the Surface of Monocrystalline Gallium Arsenide. Journal of Nano- and Electronic Physics 2017, 9, 06016. https://doi.org/10.21272/jnep.9(6).06016
  45. Md Taib M.I.; Zainal, N.; Hassan, Z. Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution. J. Nanomater. 2014, 2014, 294385. https://doi.org/10.1155/2014/294385